march 2013 sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com sgh40n60uf rev. c0 sgh40n60uf 600 v pt igbt general description fairchild ? ?s uf series igbts provide low conduction and sw itching losses. uf series is designed for the applications such as general inverter and pfc where high speed switching is required feature. features ? high speed switching ? low saturation voltage: v ce(sat) = 2.1 v @ i c = 20 a ? high input impedance absolute maximum ratings t c = 25 c unless otherwise noted symbol description sgh40n60uf unit v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c 40 a collector current @ t c = 100 c 20 a i cm (1) pulsed collector current 160 a p d maximum power dissipation @ t c = 25 c 160 w maximum power dissipation @ t c = 100 c 64 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r jc thermal resistance, junction-to-case -- 0.77 c/w r ja thermal resistance, junction-to-ambient -- 40 c/w application ? general inverter, pfc g c e to-3p g c e g c e
sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 2 www.fairchildsemi.com sgh40n60uf rev. c0 electrical characteristics of the igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v b vces / t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v = v ge 3.5 4.5 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.1 2.6 v i c = 40a , v ge = 15v -- 2.6 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1430 -- pf c oes output capacitance -- 170 -- pf c res reverse transfer capacitance -- 50 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 30 -- ns t d(off) turn-off delay time -- 65 130 ns t f fall time -- 50 150 ns e on turn-on switching loss -- 160 -- uj e off turn-off switching loss -- 200 -- uj e ts total switching loss -- 360 600 uj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 , v ge = 15v , inductive load, t c = 125 c -- 30 -- ns t r rise time -- 37 -- ns t d(off) turn-off delay time -- 110 200 ns t f fall time -- 144 250 ns e on turn - on switching loss -- 310 -- uj e off turn - off switching loss -- 430 -- uj e ts total switching loss -- 740 1200 uj q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 97 150 nc q ge gate-emitter charge -- 20 30 nc q gc gate-collector charge -- 25 40 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh ce
sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 3 www.fairchildsemi.com sgh40n60uf rev. c0 048121620 0 4 8 12 16 20 common emitter t c = 125 fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 4 www.fairchildsemi.com sgh40n60uf rev. c0 110100200 50 100 1000 2000 eon eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 10 15 20 25 30 35 40 20 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v r g = 10 t c = 25
sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 5 www.fairchildsemi.com sgh40n60uf rev. c0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 0 30 60 90 120 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 15 t c = 25 ?
sgh40n60uf 600 v pt igbt ?2009 fairchild semiconductor corporation 6 www.fairchildsemi.com sgh40n60uf rev. c0 mechanical dimensions dimensions in millimeters to-3p
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